ZQXXSMRSS
High-performance APD quadrant module with four identical silicon avalanche photodiodes and built-in preamplifier circuit, featuring optical-electrical-signal amplification conversion
ZQXXSMRSS01
TO-8
ZQXXSMRSS02
KF08
ZQXXSMRSS03
TO (32*15.8mm)
The ZQXXSMRSS series integrates four identical silicon avalanche photodiodes in a single module with a built-in preamplifier circuit, enabling weak current signal amplification and conversion to voltage signal output, achieving “optical-electrical-signal amplification” conversion process.
Key Features
- Front-illuminated chip structure
- High detector sensitivity
- Built-in preamplifier circuit
- Four identical silicon APDs
- Wide spectral range (400-1100 nm)
Applications
Technical Specifications
Package Parameters
ZQXXSMRSS01
TO-8
ZQXXSMRSS02
KF08
ZQXXSMRSS03
TO (32*15.8mm)
ZQXXSMRSS04
TO (24*7mm)
Electrical Parameters (@Ta=22±3°C)
ZQXXSMRSS01
280
±5ZQXXSMRSS02
1500
±5ZQXXSMRSS03
1000
+12ZQXXSMRSS04
100
±5Common Parameters for All Models
Active Area Diameter
4.0mm (Quadrant gap line width 0.1mm)
Spectral Range
400~1100nm
Breakdown Voltage
-400~-500V
Quadrant Non-uniformity
5%
Crosstalk
5%
Operating Temperature Coefficient
3.2V/°C (Ta=-45°C~70°C)