Z-Q-XXSMRSS
ZQXXSMRSS
High-performance APD quadrant module with four identical silicon avalanche photodiodes and built-in preamplifier circuit, featuring optical-electrical-signal amplification conversion
The ZQXXSMRSS series integrates four identical silicon avalanche photodiodes in a single module with a built-in preamplifier circuit, enabling weak current signal amplification and conversion to voltage signal output, achieving “optical-electrical-signal amplification” conversion process.
Key Features
- Front-illuminated chip structure
- High detector sensitivity
- Built-in preamplifier circuit
- Four identical silicon APDs
- Wide spectral range (400-1100 nm)
Applications
Laser guidanceLaser communication dockingLaser positioning
Specifications
Package Parameters
| ZQXXSMRSS01 | TO-8 |
| ZQXXSMRSS02 | KF08 |
| ZQXXSMRSS03 | TO (32*15.8mm) |
| ZQXXSMRSS04 | TO (24*7mm) |
Electrical Parameters (@Ta=22±3°C)
| ZQXXSMRSS01 | 280±5 |
| ZQXXSMRSS02 | 1500±5 |
| ZQXXSMRSS03 | 1000+12 |
| ZQXXSMRSS04 | 100±5 |
Common Parameters for All Models
| Active Area Diameter | 4.0mm (Quadrant gap line width 0.1mm) |
| Spectral Range | 400~1100nm |
| Breakdown Voltage | -400~-500V |
| Quadrant Non-uniformity | 5% |
| Crosstalk | 5% |
| Operating Temperature Coefficient | 3.2V/°C (Ta=-45°C~70°C) |