APD Quadrant Detector Series (1064 nm)
APD Quadrant Detector · ZQXXSDRSS
APD quadrant detector series integrating four identical silicon avalanche photodiodes in a single tube, with 400–1100 nm spectral range and 40 A/W responsivity at 1064 nm (M=100). Three variants with active areas of 4.0, 6.0, and 10.0 mm; ≤5% quadrant non-uniformity and crosstalk.
ZQXXSDRSS01
4.0 TO-8
ZQXXSDRSS02
6.0 TO-8
ZQXXSDRSS03
10.0 Φ26.4*4.4mm
The ZQXXSDRSS series integrates four identical silicon avalanche photodiodes in a single tube. The spectral response range extends from visible light to near-infrared, with peak response at 980nm and responsivity reaching 40A/W at 1064nm wavelength.
Key Features
- Front-illuminated chip structure
- High response frequency and gain
- Large receiving field of view
Applications
Technical Specifications
Basic Parameters
- ZQXXSDRSS01
- 4.0 TO-8
- ZQXXSDRSS02
- 6.0 TO-8
- ZQXXSDRSS03
- 10.0 Φ26.4*4.4mm
Electrical Parameters (@Ta=22±3°C)
- ZQXXSDRSS01
- 3.5 40/100
- ZQXXSDRSS02
- 5.0 40/150
- ZQXXSDRSS03
- 7.0 80/200
Common Parameters for All Models
- Spectral Range
- 400~1100nm undefined
- Responsivity (M=100, λ=1064nm)
- 40A/W undefined
- Operating Voltage Temperature Coefficient (-40°C~85°C)
- 3.2V/°C undefined
- Minimum Breakdown Voltage
- 350V undefined
- Maximum Breakdown Voltage
- 500V undefined
- Maximum Quadrant Non-uniformity
- 5% undefined
- Maximum Crosstalk
- 5% undefined
- Quadrant Gap Line Width
- 0.1mm undefined
- [1]Each row of the specification tables corresponds to one variant in the series — confirm the exact variant at inquiry.
- [2]Electrical parameters are specified at 22 ± 3 °C; responsivity is specified at a multiplication gain of M=100 and 1064 nm.
Related Products
ZQXXSGDSS
Package Form
T0-20 T0-8
Active Area
Φ10.0 Φ5.3
Quadrant Gap
150 70
Maximum Operating Voltage
100 150
ZQXXSZMSS
ZQXXSZMSS01
10 KF08
ZQXXSZMSS02
10 KF08
ZQXXSZMSS03
10 KF08
ZQXXSZMSS04
14 TO, Φ31×7.5mm
ZQXXSMRSS
ZQXXSMRSS01
TO-8
ZQXXSMRSS02
KF08
ZQXXSMRSS03
TO (32*15.8mm)
ZQXXSMRSS04
TO (24*7mm)